| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer cleaning method capable of preventing metal contaminant from residing on a wafer after cleaning with alkali.SOLUTION: There is provided a cleaning method of a wafer. The cleaning method of wafer includes the steps of: cleaning a wafer with an acid; and cleaning the wafer after being washed with the acid with an alkali single liquid. When a semiconductor layer on the wafer is exposed by the cleaning using the acid, the wafer cleaning method further includes a step of forming an oxide film on the surface of the semiconductor layer before carrying out the cleaning using the alkali single liquid. |
