| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which has higher light extraction efficiency than in the past.SOLUTION: A semiconductor laser device comprises: a semiconductor substrate on which a first mirror, a light emitting part and a second mirror are sequentially stacked; a first contact layer formed to contact a first region located at an outer edge of a surface of the first mirror on the side opposite to a formation side of the light emitting part; a first impurity diffusion region which is formed to contact a second region located inside the first region and on the surface of the first mirror on the side opposite to the formation side of the light emitting part and which has an impurity concentration lower than that of the first contact layer; an impurity diffusion prevention layer which is formed at a boundary part between the first contact layer and the first impurity diffusion region and composed of an insulating layer or a semiconductor layer; a first electrode formed in a manner such that a bottom face contacts a top face of the first contact layer on the outside position of the first mirror; a second contact layer formed in an upper layer of the second mirror; and a second electrode formed in an upper layer of the second contact layer. |
