SILICON WAFER HEAT TREATMENT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method which can prevent carbon contamination from a jig and an environment during a heat treatment process.SOLUTION: A silicon wafer heat treatment method comprises: a process of putting a silicon wafer into a heat treat furnace by mounting the silicon wafer on an SiC jig; a process of heat treating the silicon wafer in the heat treatment furnace under a first non-oxidizing atmosphere; a process of decreasing a temperature of the silicon wafer to a temperature capable of carrying the silicon wafer out of the heat treatment furnace; and a process of carrying the silicon wafer out of the heat treatment furnace. In the temperature decreasing process, the first non-oxidizing atmosphere is switched to an oxygen-containing atmosphere after decreasing a temperature to a temperature capable of carrying the silicon wafer out, and an oxide film of a thickness of 1-10 nm is formed on a surface of the SiC jig under the oxygen-containing atmosphere, and subsequently the oxygen-containing atmosphere is switched to a second non-oxidizing atmosphere.