METHOD FOR MANUFACTURING GROUP III NITRIDE FILM AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride film having high quality and a method for manufacturing a group III nitride semiconductor device using the same and having an excellent yield and high properties.SOLUTION: A method for manufacturing a group III nitride film 30 comprises the steps of: forming an interlayer 20 including a photothermal conversion layer 22 on a group III nitride substrate 10 and having an opening 20w; forming a group III nitride film 30 on the interlayer 20 having the opening 20w and on the group III nitride substrate 10 in the opening 20w of the interlayer 20; and separating the group III nitride film 30 from the group III nitride substrate 10 by emitting light having a wavelength longer than that corresponding to the lowest bandgap energy out of bandgap energies of the group III nitride substrate 10 and the group III nitride film 30 and a wavelength to be absorbed by the photothermal conversion layer 22.