| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a back-side illumination structure and in which reliability of a solid state imaging element having a capacitative element for storing a part of charges supplied from a light-receiving element is improved furthermore; and to provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises a solid state imaging element in which a first substrate P1 and a second substrate P2 are joined at a joint surface JS. A photodiode PD is formed on the first substrate P1 and a capacitative element CD is formed on the second substrate P2. The photodiode PD and the capacitative element CD are arranged to be opposite to each other. On the first substrate P1, a first connection part JML1 for connection with the second substrate P2 is arranged. On the second substrate P2, a second connection part JML2 for connection with the first substrate P1 is arranged. A gap part GP1 of the first connection part JML1 and a gap part GP2 of the second connection part JML2 are arranged to overlap a first light-shielding film LSF1. |
