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发明名称
微波加热处理方法
摘要
在将微波导入至处理容器内而加热被处理基板的热处理中,在基板表层形成良好的单结晶。照射微波于晶圆(W),并在该晶圆(W)上的非晶矽中,使该非晶矽在晶圆(W)与非晶矽的界面单结晶化,且升温至核生成不会发生在界面之外之区域的温度(第1温度)。接下来,以第1温度加热预定期间之后,进一步加热升温至高于第1温度的第2温度。
申请公布号
TW201508825
申请公布日期
2015.03.01
申请号
TW103110097
申请日期
2014.03.18
申请人
东京威力科创股份有限公司 TOKYO ELECTRON LIMITED
发明人
门田太一 MONDEN, TAICHI;北川淳一 KITAGAWA, JUNICHI;洪锡亨 HONG, SEOKHYOUNG;壁义郎 KABE, YOSHIRO
分类号
H01L21/268(2006.01);H01L21/265(2006.01);H01L21/20(2006.01)
主分类号
H01L21/268(2006.01)
代理机构
代理人
林志刚
主权项
地址
日本 JP
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