METHODS OF FORMING METAL OXIDE

摘要

Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.

主权项

1. A method of increasing crystallinity within a metal oxide, comprising:
annealing the metal oxide at a temperature of at least about 600° C. while exposing the metal oxide to an environment which is either inert relative to reaction with all constituents of the metal oxide, or reducing relative to reaction with one or more constituents of the metal oxide; the metal oxide being electrically conductive after said anneal.