发明名称 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
摘要 Provided is a thin film transistor. The thin film transistor comprises a gate (3). The thin film transistor also comprises an upper active layer (42), a lower active layer (41), an upper source (12), a lower source (11), an upper drain (22) and a lower drain (21); the upper active layer (42) and the lower active layer (41) are respectively positioned on the upper side and the lower side of the gate (3); the lower source (11) and the lower drain (21) are respectively connected with the lower active layer (41); and the upper source (12) and the upper drain (22) are respectively connected with the upper active layer (42). Also provided are an array substrate comprising the thin film transistor, a manufacturing method of the array substrate and a display device comprising the array substrate. By using the thin film transistor, the time required for pixel electrode charging can be shortened, so that the array substrate can have more pixel units, thereby improving the resolution of the display device.
申请公布号 WO2015024325(A1) 申请公布日期 2015.02.26
申请号 WO2013CN88516 申请日期 2013.12.04
申请人 BOE TECHNOLOGY GROUP CO., LTD.;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 ZHANG, JIAXIANG;GUO, JIAN;JIANG, XIAOHUI
分类号 H01L29/786;H01L21/77;H01L21/82;H01L23/50;H01L27/02;H01L27/12 主分类号 H01L29/786
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