SILICON WAFER AND MANUFACTURING METHOD THEREOF

摘要

A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.

主权项

1. A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature ranges from 1050° C. to the melting point of silicon and of which the temperature rising and falling rate ranges from 150° C./sec to 10000° C./sec, the method comprising:
an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with boron so as to have resistivity of 0.02 Ωcm to 1 kΩcm and of which the initial oxygen concentration Oi is in the range of 14.0×1017 to 22×1017 atoms/cm3 (Old-ASTM; ASTM F 121, 1970-1979 published by American Society for Testing and Materials International); and an oxygen precipitation nuclei dissolution process of treating a wafer in the treatment temperature range of 1150° C. to 1300° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec, wherein the oxygen precipitation nuclei dissolution process is performed before or after the epitaxial process, the thermal treatment process is applied to only an outermost surface layer of the silicon epitaxial wafer, and the oxygen precipitates density is equal to or less than 5×104 pcs/cm2 in the silicon epitaxial wafer.