| 发明名称 |
SHALLOW TRENCH ISOLATION STRUCTURE HAVING A NITRIDE PLUG |
| 摘要 |
A semiconductor structure and method for forming a shallow trench isolation (STI) structure having one or more oxide layers and a nitride plug. Specifically, the structure and method involves forming one or more trenches in a substrate. The STI structure is formed having one or more oxide layers and a nitride plug, wherein the STI structure is formed on and adjacent to at least one of the one or more trenches. One or more gates are formed on the substrate and spaced at a distance from each other. A dielectric layer is formed on and adjacent to the substrate, the STI structure, and the one or more gates. |
| 申请公布号 |
US2015054080(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414532230 |
申请日期 |
2014.11.04 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Kim Byeong Y.;Narasimha Shreesh |
| 分类号 |
H01L29/06;H01L27/088;H01L27/12 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; one or more trenches in the substrate; a shallow trench isolation structure having one or more oxide layers and at least two nitride plugs, wherein the shallow trench isolation structure is formed on and adjacent to at least one of the one or more trenches; one or more gates formed on the substrate and spaced at a distance from each other; and a dielectric layer formed on and adjacent to the substrate, the shallow trench isolation structure, and the one or more gates. |
| 地址 |
Armonk NY US |
