| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element that attains both low dislocation density and excellent surface flatness, and a nitride semiconductor layer.SOLUTION: There is provided a semiconductor light-emitting element including a ground layer, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer is provided between the ground layer and the first semiconductor layer. The second semiconductor layer is provided between the ground layer and the light-emitting layer. The ground layer has a first primary surface on a side of the second semiconductor layer and a second primary surface on the opposite side of the first primary surface. The ground layer has top portions, side portions, and bottom portions on the second primary surface. At least any of dislocations connected to the top portions are connected to the side portions. Dislocations connected to regions of the first primary surface overlapped with the bottom portions are lower than dislocations connected to the bottom portions. |
