EPITAXIAL SEMICONDUCTOR RESISTOR WITH SEMICONDUCTOR STRUCTURES ON SAME SUBSTRATE

摘要

An electrical device is provided that includes a substrate having an upper semiconductor layer, a buried dielectric layer and a base semiconductor layer. At least one isolation region is present in the substrate that defines a semiconductor device region and a resistor device region. The semiconductor device region includes a semiconductor device having a back gate structure that is present in the base semiconductor layer. Electrical contact to the back gate structure is provided by doped epitaxial semiconductor pillars that extend through the buried dielectric layer. An epitaxial semiconductor resistor is present in the resistor device region. Undoped epitaxial semiconductor pillars extending from the epitaxial semiconductor resistor to the base semiconductor layer provide a pathway for heat generated by the epitaxial semiconductor resistor to be dissipated to the base semiconductor layer. The undoped and doped epitaxial semiconductor pillars are composed of the same epitaxial semiconductor material.

主权项

1. An electrical device comprising:
a substrate including an upper semiconductor layer on a buried dielectric layer, wherein the buried dielectric layer is present on a base semiconductor layer; an isolation region present through the upper semiconductor layer to the buried dielectric layer, wherein the isolation region is positioned to define at least one semiconductor device region and a resistor device region; at least one semiconductor device that is present in the at least one semiconductor device region; and an epitaxial semiconductor resistor that is present in the resistor device region, wherein undoped semiconductor pillars extending from the epitaxial semiconductor resistor through the buried dielectric layer to the base semiconductor layer provide a pathway for heat generated by the epitaxial semiconductor resistor to be dissipated to the base semiconductor layer, the undoped semiconductor pillars are comprised of a same epitaxial semiconductor material as the doped semiconductor pillars.