| 发明名称 |
NONLINEAR MEMRISTORS |
| 摘要 |
A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material. |
| 申请公布号 |
US2015053909(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201214385259 |
申请日期 |
2012.04.25 |
| 申请人 |
Yang Jianhua;Zhang Max;Pickett Matthew D.;Williams R. Stanley |
发明人 |
Yang Jianhua;Zhang Max;Pickett Matthew D.;Williams R. Stanley |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonlinear memristor including:
a bottom electrode; a top electrode; an insulator layer between the bottom electrode and the top electrode, the insulator layer comprising a metal oxide; a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode; and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode, wherein the top electrode comprises the same metal as the metal in the metal-insulator-transition material. |
| 地址 |
Palo Alto CA US |
