| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor chip manufacturing method which inhibits remaining of an adhesive layer on a semiconductor substrate surface.SOLUTION: A semiconductor chip manufacturing method according to the present embodiment comprises: a process of forming on a surface of a semiconductor substrate W, a photoresist 750 having a first film part 752 with an opening 760 having a width which gradually increases with decreasing distance to an upper part and a second film part 754 which extends upward from a top edge of the first film part 752 at an angle smaller than an angle at which the width of the opening at the first film part increases; a process of forming by anisotropic dry etching by using the photoresist 750, a surface side trench having a first trench part having a width which gradually decreases with decreasing distance to a rear face of the substrate, and a second trench part which extends toward a rear face side of the substrate with maintaining a width not to be narrower than a width of a lowermost part of the first trench part; a process of attaching to the substrate surface, a dicing tape having an adhesive layer; a process of forming a rear face-side trench along the surface-side trench from the rear face side of the substrate by a dicing blade; and a process of subsequently removing the dicing tape. |
