发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
Exemplary embodiments of the present disclosure provide a thin film transistor array panel including a first insulating substrate; a gate line and a data line disposed on the first insulating substrate, intersecting with each other, and being insulated from each other; a first passivation layer disposed on the gate line and the data line and comprising a plurality of first openings; a first electrode disposed on the first passivation layer; and a second electrode disposed in the first opening, thereby simplifying a manufacturing process of the thin film transistor array panel. |
申请公布号 |
US2015053987(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414151502 |
申请日期 |
2014.01.09 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
KIM Duk-Sung;KIM Sung Man;PARK Seung Hyun;SONG Dae Ho |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor array panel, comprising:
a first insulating substrate; a gate line and a data line disposed on the first insulating substrate; a first passivation layer disposed on the gate line and the data line, the first passivation layer comprising a first opening; a first electrode disposed on the first passivation layer; and a second electrode disposed in the first opening. |
地址 |
Yongin-city KR |