发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 Exemplary embodiments of the present disclosure provide a thin film transistor array panel including a first insulating substrate; a gate line and a data line disposed on the first insulating substrate, intersecting with each other, and being insulated from each other; a first passivation layer disposed on the gate line and the data line and comprising a plurality of first openings; a first electrode disposed on the first passivation layer; and a second electrode disposed in the first opening, thereby simplifying a manufacturing process of the thin film transistor array panel.
申请公布号 US2015053987(A1) 申请公布日期 2015.02.26
申请号 US201414151502 申请日期 2014.01.09
申请人 Samsung Display Co., Ltd. 发明人 KIM Duk-Sung;KIM Sung Man;PARK Seung Hyun;SONG Dae Ho
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin film transistor array panel, comprising: a first insulating substrate; a gate line and a data line disposed on the first insulating substrate; a first passivation layer disposed on the gate line and the data line, the first passivation layer comprising a first opening; a first electrode disposed on the first passivation layer; and a second electrode disposed in the first opening.
地址 Yongin-city KR