发明名称 |
ANGULAR DISPLACEMENT SENSOR OF COMPLIANT MATERIAL |
摘要 |
Disclosed is a sensing device that includes a flexible substrate having an elongated structure extending between a first end and a second end, the elongated structure being compliant material that is flexible and bendable from a linear, non-bent position to multiple bendable positions. The sensing device also includes a first compliant strain sensing element embedded within the compliant material and extending between the first end and the second end along a longitudinal length of the elongated structure. The first compliant strain sensing element includes a second compliant material that is flexible and bendable, where an electrical property of the first compliant strain sensing element changes in proportion to an applied strain on the elongated structure. |
申请公布号 |
US2015054527(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414511073 |
申请日期 |
2014.10.09 |
申请人 |
Bend Labs, Inc. |
发明人 |
Reese Shawn P. |
分类号 |
G01B7/30;G01B7/00 |
主分类号 |
G01B7/30 |
代理机构 |
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代理人 |
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主权项 |
1. A sensor system comprising:
an angular displacement sensor comprising:
an elongated structure extending between a first end and a second end, the elongated structure being compliant material that is flexible and bendable from a linear, non-bent position to multiple bendable positions; anda first compliant capacitor, wherein the first compliant capacitor comprises a first conductive layer embedded within and extending from the first end to the second end along a longitudinal length of the elongated structure to form a first electrode of the first compliant capacitor, a second conductive layer embedded within and extending from the first end to the second end along the longitudinal length to form a second electrode of the first compliant capacitor, and an elastomer dielectric layer extending between the first conductive layer and the second conductive layer; and a circuit coupled to the first compliant capacitor, the circuit to measure a capacitance of the first compliant capacitor to sense bending movement of the elongated structure based on the capacitance of the first compliant capacitor. |
地址 |
South Salt Lake City CA US |