| 摘要 |
<p>The present invention suggests a thin film transistor which includes a gate electrode, a source electrode and a drain electrode which are vertically separated from the gate electrode and are horizontally separated from each other, a gate insulation layer which is formed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, an active layer which is formed between the gate insulation layer and the source and drain electrodes, and a manufacturing method thereof. The active layer is composed of an InTiZnO thin film. An excimer laser is emitted to at least part of the active layer.</p> |
