发明名称 NON-VOLATILE MEMORY ELEMENT, ELECTRONIC CONTROL SYSTEM, AND METHOD FOR OPERATING NON-VOLATILE MEMORY ELEMENT
摘要 <p>Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages.</p>
申请公布号 EP2696350(A4) 申请公布日期 2015.02.25
申请号 EP20120764518 申请日期 2012.03.22
申请人 INDUSTRIAL BANK OF KOREA 发明人 SEO, MYOUNG KYU;KIM, YONG SOO
分类号 G11C16/26;G11C16/08 主分类号 G11C16/26
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