| 摘要 |
<p>The present invention relates to a memory device and a method for performing access operation in the memory device. The memory device includes an array of a memory cell arranged as a plurality of matrixes, a plurality of word lines which are connected to the rows of the related memory cell, and a plurality of bit lines which are connected to the columns of the related memory cell. The array is operated in an array voltage domain by an array voltage supply. An access circuit is connected to the word lines and the bit lines for performing the access operation for the selected memory cells of the array. At least a part of the access circuit is operated in a peripheral voltage domain by the peripheral voltage supply. A control circuit controls the operation of the access circuit.</p> |
