| 摘要 |
1,203,211. Silicon nitride layer on silicon. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 14 Nov., 1967 [23 Aug., 1966], No. 28176/66. Heading CIA. [Also in Division H1] A silicon nitride layer is grown on the surface of a silicon substrate by heating the substrate in an ammonia-containing atmosphere at a pressure of at least 20 lb./sq. inch at a temperature above 500‹ C., preferably from 800‹ to 1200‹ C. In one embodiment nested vessels 12 of silica containing the silicon strip 14 are placed in the base 1 of a dried autoclave which is then sealed and connected to a vacuum system by tube 9. After filling with ammonia to the required pressure the autoclave is lowered into a furnace and heated. For temperatures above 800‹ C. a low heat capacity furnace is used such as a resistance furnace, the whole assembly being surrounded by a stainless steel container. |
