发明名称 METHOD FOR PRODUCING SEMICONDUCTOR CERAMIC COMPOSITION
摘要 <p>Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance ± from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO 3 -based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700°C to 1,300°C; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300°C to 1,450°C, to the calcined raw material; forming the same; and then sintering at a temperature of 1,300°C to 1,450°C.</p>
申请公布号 EP2840072(A1) 申请公布日期 2015.02.25
申请号 EP20130778329 申请日期 2013.04.19
申请人 HITACHI METALS, LTD. 发明人 SHIMADA, TAKESHI;UEDA, ITARU;INO, KENTARO
分类号 C04B35/468;H01C7/02 主分类号 C04B35/468
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