| 摘要 |
<p>Provided is a semiconductor device which includes a tri-gate which is formed on a pin active region. The semiconductor device includes a substrate which includes an NMOS region and a PMOS region, the pin active region which protrudes from the substrate and includes a top side and a lateral side, and a first metal gate electrode layer which is formed on the pin active region. The first metal gate electrode layer has a first thickness on the upper side of the pin active region and a second thickness on the lateral side of the pin active region. A second metal gate electrode layer is formed on the first metal gate electrode layer. The second metal gate electrode layer has a third thickness on the upper side of the pin active region and a fourth thickness on the lateral side of the pin active region. The first thickness of the first metal gate electrode layer is different from the second thickness of the first metal gate electrode layer. The third thickness of the second metal gate electrode layer is different from the fourth thickness of the second metal gate electrode layer.</p> |
