Packaged semiconductor device

摘要

A packaged semiconductor device includes a substrate including a first major surface, a second major surface, first vias running between the first major surface and the second major surface, first contact pads contacting the first vias at the first major surface, second contact pads contacting the first vias at the second major surface, and an opening between the first major surface and the second major surface. A first integrated circuit (IC) die is positioned in the opening in the substrate. Electrical connections are formed between the second IC die and the second contact pads. A first conductive layer is over the first contact pads and contact pads on the first IC die. Encapsulating material is on the second major surface of the substrate around the first IC die, the second IC die, the electrical connections, and between edges of the opening and edges of the first IC die.

主权项

1. A packaged semiconductor device, comprising:
a first integrated circuit die positioned in an opening in a circuit board, the first integrated circuit die having an active surface facing a same direction as a first major surface of the circuit board, the circuit board further comprising a second major surface, first vias running between the first major surface and the second major surface, first contact pads contacting the first vias at the first major surface, second contact pads contacting the first vias at the second major surface, the opening extending through the first major surface and the second major surface; a second integrated circuit die adjacent a non-active surface of the first integrated circuit die; wire bonds between the second integrated circuit die and the second contact pads; a continuous body of encapsulant material around the first and second integrated circuit dies, the wire bonds, and the second contact pads, the encapsulant material extending from sides of the first integrated circuit die to sides of the opening in contact with the first major surface and the second major surface, the active surface of the first integrated circuit die remaining free of the encapsulant material; a first conductive layer over the first major surface contacting the first contact pads and contact pads on the active surface of the first integrated circuit die.