发明名称 Optical semiconductor device including antiparallel semiconductor light-emitting element and Schottky diode element
摘要 An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in Schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a Schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the Schottky diode with respect to the first and second power supply terminals.
申请公布号 US8963172(B2) 申请公布日期 2015.02.24
申请号 US201414194071 申请日期 2014.02.28
申请人 Stanley Electric Co., Ltd. 发明人 Kazama Takuya
分类号 H01L29/18;H01L25/16;H01L25/075 主分类号 H01L29/18
代理机构 Holtz, Holtz, Goodman & Chick PC 代理人 Holtz, Holtz, Goodman & Chick PC
主权项 1. An optical semiconductor device comprising: a semiconductor support substrate of a conductivity type, the semiconductor support substrate having a first resistivity; a semiconductor layer of said conductivity type, the semiconductor layer being formed on said semiconductor support substrate and having a second resistivity higher than said first resistivity; a first power supply terminal having a first metal in Schottky barrier contact with said semiconductor layer along with said semiconductor support substrate, so that a Schottky diode element is constructed by said first power supply terminal and said semiconductor layer along with said semiconductor support substrate; a second power supply terminal having a second metal in ohmic contact with said semiconductor support substrate; and a semiconductor light-emitting element connected between said first and second power supply terminals, wherein said semiconductor light-emitting element is antiparallel with said Schottky diode with respect to said first and second power supply terminals.
地址 Tokyo JP