发明名称 |
Optical semiconductor device including antiparallel semiconductor light-emitting element and Schottky diode element |
摘要 |
An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in Schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a Schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the Schottky diode with respect to the first and second power supply terminals. |
申请公布号 |
US8963172(B2) |
申请公布日期 |
2015.02.24 |
申请号 |
US201414194071 |
申请日期 |
2014.02.28 |
申请人 |
Stanley Electric Co., Ltd. |
发明人 |
Kazama Takuya |
分类号 |
H01L29/18;H01L25/16;H01L25/075 |
主分类号 |
H01L29/18 |
代理机构 |
Holtz, Holtz, Goodman & Chick PC |
代理人 |
Holtz, Holtz, Goodman & Chick PC |
主权项 |
1. An optical semiconductor device comprising:
a semiconductor support substrate of a conductivity type, the semiconductor support substrate having a first resistivity; a semiconductor layer of said conductivity type, the semiconductor layer being formed on said semiconductor support substrate and having a second resistivity higher than said first resistivity; a first power supply terminal having a first metal in Schottky barrier contact with said semiconductor layer along with said semiconductor support substrate, so that a Schottky diode element is constructed by said first power supply terminal and said semiconductor layer along with said semiconductor support substrate; a second power supply terminal having a second metal in ohmic contact with said semiconductor support substrate; and a semiconductor light-emitting element connected between said first and second power supply terminals, wherein said semiconductor light-emitting element is antiparallel with said Schottky diode with respect to said first and second power supply terminals. |
地址 |
Tokyo JP |