Photoelectric converter having chalcopyrite compound semiconductor layer partitioned into pixels and shielding layer arranged around each pixel

摘要

A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer.

主权项

1. A photoelectric converter comprising:
a substrate; a lower electrode layer arranged on the substrate; a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels; a transparent electrode layer arranged on the compound semiconductor layer; a shielding layer arranged around each of the pixels on the compound semiconductor layer; and a metal electrode layer made of aluminum selectively formed on the transparent electrode layer and connected to the transparent electrode layer, wherein the shielding layer is made of aluminum or black resist, and the shielding layer made of aluminum is formed on the transparent electrode layer.