发明名称 Semiconductor device
摘要 The substrate is made of a compound semiconductor, and has a recess, which opens at one main surface and has side wall surfaces when viewed in a cross section along a thickness direction. The gate insulating film is disposed on and in contact with each of the side wall surfaces. The substrate includes a source region having first conductivity type and disposed to be exposed at the side wall surface; and a body region having second conductivity type and disposed in contact with the source region at a side opposite to the one main surface so as to be exposed at the side wall surface, when viewed from the source region. The recess has a closed shape when viewed in a plan view. The side wall surfaces provide an outwardly projecting shape in every direction when viewed from an arbitrary location in the recess.
申请公布号 US8963234(B2) 申请公布日期 2015.02.24
申请号 US201313863143 申请日期 2013.04.15
申请人 Sumitomo Electric Industries, Ltd. 发明人 Masuda Takeyoshi;Hiyoshi Toru;Wada Keiji
分类号 H01L29/78;H01L29/423;H01L29/417;H01L29/04;H01L29/06;H01L29/16 主分类号 H01L29/78
代理机构 Venable LLP 代理人 Venable LLP ;Sartori Michael A.;Ostler Trent B.
主权项 1. A semiconductor device comprising: a substrate made of a compound semiconductor and having a recess, which opens at one main surface thereof and has side wall surfaces; a gate insulating film disposed on and in contact with each of said side wall surfaces; and a gate electrode disposed on and in contact with said gate insulating film, said substrate including a source region having first conductivity type and disposed to be exposed at said side wall surface, when viewed in a cross section along a thickness direction, anda body region having second conductivity type and disposed in contact with said source region at a side opposite to said one main surface so as to be exposed at said side wall surface, when viewed from said source region, said recess having a closed shape when viewed in a plan view, said side wall surfaces providing an outwardly projecting shape in every direction when viewed from an arbitrary location in said recess, wherein said side wall surface of said recess includes a first plane having a plane orientation of {0-33-8}, wherein said side wall surface of said recess microscopically includes said first plane, and said side wall surface microscopically further includes a second plane having a plane orientation of {0-11-1} , and wherein said first plane and said second plane of said side wall surface of said recess includes a combined plane having a plane orientation of {0-11-2}.
地址 Osaka-shi JP