Strongly correlated nonvolatile memory element

摘要

In aspects of the invention, a strongly correlated nonvolatile memory element is provided which exhibits phase transitions and nonvolatile switching functions through electrical means. In an aspect of the invention, a strongly correlated nonvolatile memory element is provided including, on a substrate, a channel layer, a gate electrode, a gate insulator, a source electrode, and a drain electrode. The channel layer includes a strongly correlated oxide thin film, and is formed of a perovskite type manganite which exhibits a charge-ordered phase or an orbital-ordered phase; the gate insulator is formed in contact with at least a portion of a surface or interface of the channel layer and is sandwiched between the channel layer and the gate electrode, and the source electrode and drain electrode are formed in contact with at least a portion of the channel layer.

主权项

1. A strongly correlated nonvolatile memory element, comprising, on a substrate:
a channel layer including a strongly correlated oxide thin film; a gate electrode; a gate insulator formed in contact with at least a portion of a surface or interface of the channel layer and sandwiched between the channel layer and the gate electrode; and a source electrode and a drain electrode formed in contact with at least a portion of the channel layer, wherein the channel layer includes a perovskite type manganite which can undergo transitions between a metallic phase and an insulator phase, which is either a charge-ordered phase or an orbital-ordered phase, the channel layer is formed of a trigger layer of a first type strongly correlated oxide and a tuning layer of a second type strongly correlated oxide, and the trigger layer and the tuning layer are disposed by stacking one on the other.