Semiconductor device including a plurality of different functional elements and method of manufacturing the same

摘要

At least first and second Si1-xGex (0≦x≦1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second Si1-xGex (0≦x≦1) layers. A lattice constant of the first Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the second material layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a silicon substrate; forming an amorphous SiGe layer directly on and completely covers the insulating film; heating the silicon substrate so that the amorphous SiGe layer is laterally solid-phase or liquid-phase grown on the insulating film, and thereby, forming a crystallized SiGe layer as a buffer layer on the silicon substrate and the insulating film; and forming a material layer including a functional element directly on said crystallized SiGe layer; wherein forming the amorphous SiGe layer includes forming the amorphous SiGe layer with a mixed crystal ratio of silicon and germanium so as to match a lattice constant of the crystallized SiGe layer with a lattice constant of the material which is subsequently formed on the crystallized SiGe layer.