Circuit pattern with high aspect ratio and method of manufacturing the same

摘要

A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process.

主权项

1. A process for forming a circuit pattern, comprising the steps of:
forming a plurality of parallel lines and at least one supporting line intersecting said parallel lines on a substrate, wherein said plurality of parallel lines and said at least one supporting line are formed in a same material layer; after forming said plurality of parallel lines and said at least one supporting line, forming supporting isolation structures in the spaces between said parallel lines and said supporting line, wherein said supporting isolation structures has a top surface that is substantially flush with a top surface of said parallel lines and said at least one supporting line; and disconnecting said parallel lines and said supporting line after forming said isolation structures.