| 发明名称 | Semiconductor devices having E-fuse structures and methods of fabricating the same | ||
| 摘要 | A semiconductor device includes: an e-fuse gate, a floating pattern between the e-fuse gate and an e-fuse active portion, a blocking dielectric pattern between the floating pattern and the e-fuse gate, and an e-fuse dielectric layer between the floating pattern and the e-fuse active portion. The floating pattern includes a first portion between the e-fuse gate and the e-fuse active portion and a pair of second portions extended upward along both sidewalls of the e-fuse gate from both edges of the first portion. | ||
| 申请公布号 | US8963284(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201314033797 | 申请日期 | 2013.09.23 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Deok-Kee |
| 分类号 | H01L23/52;H01L23/538;H01L21/28;H01L23/525;H01L23/544;H01L27/06;H01L27/115;H01L29/66;H01L29/788 | 主分类号 | H01L23/52 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. An e-fuse structure for a semiconductor device, the e-fuse structure comprising: an e-fuse gate formed on an e-fuse active portion of a substrate; a floating layer pattern formed between the e-fuse active portion of the substrate and the e-fuse gate, the floating layer pattern covering a lower surface and sidewalls of the e-fuse gate. | ||
| 地址 | Gyeonggi-Do KR | ||