High voltage device and manufacturing method thereof

摘要

The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one another but are electrically connected with one another; a source and a drain in the device region; and a gate on the surface of the substrate and between the source and drain in the device region.

主权项

1. A method for manufacturing high voltage device comprising:
providing a substrate of a conductivity type, and forming an isolation structure in the substrate to define a device region; forming a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions which are at least partially separated from one another by a portion of the substrate of the conductivity type in between but are electrically connected with one another, the portion of the substrate of the conductivity type including no drift region; forming a source and a drain in the device region, wherein the drain extends along a first direction and the multiple sub-regions are located at two different sides at a second direction of the drain, and wherein the multiple sub-regions at each of the two sides of the drain are connected to one another and the multiple sub-regions extends farther from the drain than where the multiple sub-regions are connected; and forming a gate on the surface of the substrate and between the source and drain in the device region, wherein the drain also extends along the first direction.