Method of forming opening on semiconductor substrate

摘要

The present invention provides a method of forming an opening on a semiconductor substrate. First, a substrate is provided. Then a dielectric layer and a cap layer are formed on the substrate. A ratio of a thickness of the dielectric layer and a thickness of the cap layer is substantially between 15 and 1.5. Next, a patterned boron nitride layer is formed on the cap layer. Lastly, an etching process is performed by using the patterned hard mask as a mask to etch the cap layer and the dielectric layer so as to form an opening in the cap layer and the dielectric layer.

主权项

1. A method of forming an opening on the semiconductor substrate, comprising:
providing a substrate; forming a dielectric layer and a cap layer on the substrate, wherein a ratio of a thickness of the dielectric layer and a thickness of the cap layer is substantially between 15 and 1.5; forming a patterned boron nitride layer on the cap layer, wherein the boron concentration with respect to whole atoms in the patterned boron nitride layer is substantially between 50% and 80%; and performing an etching process by using the patterned boron nitride layer as a mask to etch the cap layer and the dielectric layer so as to form an opening in the cap layer and the dielectric layer.