Integrated circuits with improved spacers and methods for fabricating same

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes simultaneously shielding a shielded region of a semiconductor substrate and exposing a surface of the shielded region of the semiconductor substrate. An ion implantation is performed to form implant areas in a non-shielded region of the semiconductor substrate adjacent the shielded region. Also, the semiconductor substrate is silicided to form a silicided area in the shielded region of the semiconductor substrate.

主权项

1. A method for fabricating an integrated circuit comprising:
simultaneously shielding a shielded region of a semiconductor substrate and exposing a surface of the shielded region of the semiconductor substrate by forming a spacer over the semiconductor substrate, wherein the spacer has an outer surface defining a maximum thickness at an elevated section and a reduced thickness at a base section; performing an ion implantation to form implant areas in a non-shielded region of the semiconductor substrate adjacent the shielded region; and siliciding the semiconductor substrate to form a silicided area in the shielded region of the semiconductor substrate.