发明名称 Optoelectronic integrated package module and method of manufacturing the same
摘要 According to one embodiment, there is provided an optoelectronic integrated package module including a silicon interposer, an optical semiconductor element formed in the silicon interposer, and a semiconductor integrated circuit chip module including a first semiconductor integrated circuit chip including a logic circuit and mounted on a first principal surface and a second semiconductor integrated circuit chip having a second principal surface side mounted on the silicon interposer. The first and second semiconductor integrated circuit chips are electrically connected to each other via the via interconnections formed inside the second semiconductor integrated circuit chip from the first principal surface. The first or second semiconductor integrated circuit chip receives an electrical signal obtained via the via interconnection by means of the unterminated reception circuit.
申请公布号 US8965149(B2) 申请公布日期 2015.02.24
申请号 US201313839930 申请日期 2013.03.15
申请人 Kabushiki Kaisha Toshiba 发明人 Uemura Hiroshi;Furuyama Hideto
分类号 G02B6/12;G02B6/13;G02B6/42;G02B6/43 主分类号 G02B6/12
代理机构 Holtz, Holtz, Goodman & Chick PC 代理人 Holtz, Holtz, Goodman & Chick PC
主权项 1. An optoelectronic integrated package module comprising: a silicon interposer formed on a silicon substrate, the interposer including an electrical interconnection and an optical waveguide; an optical semiconductor element formed in the silicon interposer, the optical semiconductor element being electrically connected to the electrical interconnection and optically coupled to the optical waveguide; and a semiconductor integrated circuit chip module including a first semiconductor integrated circuit chip including a logic circuit and a second semiconductor integrated circuit chip configured to drive the optical semiconductor element, the second semiconductor integrated circuit chip including a via interconnection formed inside from a first principal surface side with a second principal surface side opposite to the first principal surface side being mounted on the silicon interposer, and the first semiconductor integrated circuit chip being mounted on the first principal surface side of the second semiconductor integrated circuit chip, wherein the first semiconductor integrated circuit chip and the second semiconductor integrated circuit chip are connected to each other via the via interconnection, and one of the first semiconductor integrated circuit chip and the second semiconductor integrated circuit chip receives an electrical signal obtained via the via interconnection by means of an unterminated reception circuit.
地址 Tokyo JP