| 摘要 |
<p>The present invention suggests a method to manufacture a semiconductor device, including: a step of preparing a substrate including first and second areas; a step of forming trenches and protruding active pins in the first and second areas; a step of forming spacers covering sides of the active pins, and forming extended parts of the active pins in a lower part of a spacer film by recessing floor surfaces of the trenches; a step of injecting a first foreign substance into the extended parts of the active pins in the first area; and a step of injecting a second foreign substance into the extended parts of the active pins in the second area.</p> |
