| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to application of metal layers of coating and can be used in production of semiconductors. Claimed is composition for application of metal layer, which contains source of metal ions and at least one suppressing agent, which is obtained by reaction of amine compound, containing active functional amino groups, with mixture of ethylene oxide and at least one compound, selected from C3 and C4 alkylene oxides, to obtain random copolymers of ethylene oxide and at least one more of C3 and C4 alkylene oxides, with said suppressing agent having molecular weight 6000 g/mol and higher, and content of ethylene oxide in copolymer of ethylene oxide and C3-C4 alkylene oxide being from 30 to 70%. Also claimed is method of electrolytic application of metal layer on substrate by contact of electrolytic bath for application of metal layer, containing said composition, with substrate, and creation of current density in substrate for period of time, sufficient for application of metal layer on substrate.EFFECT: inventions make it possible to obtain coating layer providing voidless filling of surface elements of nanometer and micrometer scale.15 cl, 12 dwg, 8 ex |
