发明名称 WAFER FOR FORMING IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND IMAGING ELEMENT CHIP
摘要 A wafer for forming an imaging element has a test pattern and a plurality of imaging element units. The wafer has an imaging region which includes a great number of photoelectric conversion pixels, an imaging element units and a test pattern. The test pattern includes a testing organic photoelectric conversion film and a testing counter electrode having the same configuration and formed at the same time as the organic photoelectric conversion film and a counter electrode, respectively of the photoelectric conversion pixels. A first testing terminal is electrically connected to the undersurface side of the testing organic photoelectric conversion film, and a second testing terminal is electrically connected to the testing counter electrode. A protective film is formed over the entire semiconductor wafer so as to cover the imaging region and the test pattern, and is then partially removed so that a part of each testing terminal is exposed.
申请公布号 US2015048352(A1) 申请公布日期 2015.02.19
申请号 US201414496910 申请日期 2014.09.25
申请人 FUJIFILM CORPORATION 发明人 ICHIKI Takahiko
分类号 H01L27/30;H01L51/00;H01L51/44 主分类号 H01L27/30
代理机构 代理人
主权项 1. A wafer for forming an imaging element comprising: a semiconductor wafer provided with a signal reading circuit; a plurality of imaging element units formed on the semiconductor wafer, each of the imaging element units having an imaging region including a great number of photoelectric conversion pixels; a test pattern formed in a region other than the imaging region on the semiconductor wafer; and a protective film, wherein each of the photoelectric conversion pixels includes a pixel electrode, an organic photoelectric conversion film and a counter electrode which are laminated in the recited order on the semiconductor wafer;the test pattern includes a testing organic photoelectric conversion film and a testing counter electrode formed thereon having the same configuration and formed at the same time as the organic photoelectric conversion film and the counter electrode, respectively, of the photoelectric conversion pixels; a first testing terminal electrically connected to the undersurface side of the testing organic photoelectric conversion film; and a second testing terminal electrically connected to the testing counter electrode; andthe protective film is formed over the entire semiconductor wafer so as to cover the imaging region and the test pattern, and is then partially removed so that a part of the first testing terminal and a part of the second testing terminal are exposed.
地址 Tokyo JP