| 发明名称 |
ORGANIC THIN-FILM TRANSISTOR |
| 摘要 |
An n-type organic thin-film transistor including a substrate, a gate, and a dielectric layer covering the substrate and the gate. A semiconductor-insulator polymer blend layer is disposed on the dielectric layer; A source and a drain are disposed on top of the semiconductor-insulator polymer blend layer. |
| 申请公布号 |
US2015048315(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201313969293 |
申请日期 |
2013.08.16 |
| 申请人 |
Palo Alto Research Center Incorporated |
发明人 |
Ng Tse Nga;Fujieda Ichiro;Whiting Gregory;Hsieh Bing R. |
| 分类号 |
H01L51/05;H01L51/00 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An n-type organic thin-film transistor, comprising:
a substrate; a gate disposed on the substrate; a dielectric layer covering the substrate and the gate; a semiconductor-insulator polymer blend layer disposed on the dielectric layer; a source; and a drain, wherein the source and the drain are disposed on top of the semiconductor-insulator polymer blend layer. |
| 地址 |
Palo Alto CA US |
