发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a technique, in a manufacturing process of a semiconductor device formed by using a thin film transistor, where the number of photo masks can be reduced, a manufacturing cost can be reduced, and productivity and reliability can be improved.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a light-transmitting film for forming a channel protection layer on an oxide semiconductor layer; forming a positive photoresist on the film for forming the channel protection layer; and selectively forming a channel protection layer on a channel formation region in the oxide semiconductor layer by using a back surface light exposure method.
申请公布号 JP2015035608(A) 申请公布日期 2015.02.19
申请号 JP20140184047 申请日期 2014.09.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SAKATA JUNICHIRO;SERIKAWA TADASHI
分类号 H01L21/336;G02F1/1368;H01L29/786;H01L51/50;H05B33/14 主分类号 H01L21/336
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