发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique, in a manufacturing process of a semiconductor device formed by using a thin film transistor, where the number of photo masks can be reduced, a manufacturing cost can be reduced, and productivity and reliability can be improved.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a light-transmitting film for forming a channel protection layer on an oxide semiconductor layer; forming a positive photoresist on the film for forming the channel protection layer; and selectively forming a channel protection layer on a channel formation region in the oxide semiconductor layer by using a back surface light exposure method. |
申请公布号 |
JP2015035608(A) |
申请公布日期 |
2015.02.19 |
申请号 |
JP20140184047 |
申请日期 |
2014.09.10 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SAKATA JUNICHIRO;SERIKAWA TADASHI |
分类号 |
H01L21/336;G02F1/1368;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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