发明名称 METROLOGY MARKS FOR BIDIRECTIONAL GRATING SUPERPOSITION PATTERNING PROCESSES
摘要 Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating a template mask that extends across and perpendicular to such spacer gratings. Cut spacer gratings are etched into a second layer using the template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer.
申请公布号 US2015050755(A1) 申请公布日期 2015.02.19
申请号 US201313968336 申请日期 2013.08.15
申请人 International Business Machines Corporation 发明人 Ausschnitt Christopher P.;Felix Nelson M.;Halle Scott D.
分类号 H01L21/308;H01L23/544;H01L21/66 主分类号 H01L21/308
代理机构 代理人
主权项 1. A method of fabricating reference marks for lithography comprising: providing grating lines on a first layer; forming spacer gratings around said grating lines; forming a template mask extending across and perpendicular to said spacer gratings; and etching a second layer using said template mask to superimpose at least a portion of said spacer gratings of said first layer into said second layer, thereby forming cut spacer gratings in said second layer.
地址 Armonk NY US