发明名称 |
METROLOGY MARKS FOR BIDIRECTIONAL GRATING SUPERPOSITION PATTERNING PROCESSES |
摘要 |
Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating a template mask that extends across and perpendicular to such spacer gratings. Cut spacer gratings are etched into a second layer using the template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer. |
申请公布号 |
US2015050755(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201313968336 |
申请日期 |
2013.08.15 |
申请人 |
International Business Machines Corporation |
发明人 |
Ausschnitt Christopher P.;Felix Nelson M.;Halle Scott D. |
分类号 |
H01L21/308;H01L23/544;H01L21/66 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating reference marks for lithography comprising:
providing grating lines on a first layer; forming spacer gratings around said grating lines; forming a template mask extending across and perpendicular to said spacer gratings; and etching a second layer using said template mask to superimpose at least a portion of said spacer gratings of said first layer into said second layer, thereby forming cut spacer gratings in said second layer. |
地址 |
Armonk NY US |