TUNGSTEN DEPOSITION WITH TUNGSTEN HEXAFLUORIDE (WF6) ETCHBACK

摘要

Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.

主权项

1. A method for depositing a tungsten film on a substrate, comprising:
positioning a substrate having a feature formed therein in a substrate processing chamber, wherein the feature is defined by at least one sidewall and a bottom surface; depositing a first tungsten film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature; etching the first tungsten film of the bulk tungsten layer using a plasma treatment to remove a portion of the first tungsten film by exposing the first tungsten film to a continuous flow of the tungsten halide compound and an activated treatment gas; and depositing a second tungsten film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.