WIRING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

A wiring substrate includes: a substrate layer made of glass or silicon and including: a first surface formed with a first hole; and a second surface formed with a second hole and being opposite to the first surface, wherein the first hole is communicated with the second hole; a connection pad formed in the second hole; a first wiring layer formed in the first hole and electrically connected to the connection pad; a first insulation layer formed on the first surface of the substrate layer to cover the first wiring layer; and a second wiring layer formed on the first insulation layer and electrically connected to the first wiring layer. A diameter of the first hole is gradually decreased from the first surface toward the second surface, and a diameter of the second hole is gradually decreased from the second surface toward the first surface.

主权项

1. A wiring substrate comprising:
a substrate, a material of the substrate consisting of of glass or silicon, the substrate having:
a first surface formed with a first hole; anda second surface formed with a second hole and being opposite to the first surface, the first hole being communicated with the second hole, and the second surface of the substrate is a mounting surface on which a semiconductor chip is to be mounted; a connection pad formed in the second hole; a first wiring layer formed in the first hole and electrically connected to the connection pad; a first insulation layer formed on the first surface of the substrate to cover the first wiring layer, the first insulting layer being made of a resin material; a second wiring layer formed on the first insulation layer and electrically connected to the first wiring layer; a plurality of insulation layers and a plurality of wiring layers being alternately arranged to form a stack on the first surface side of the substrate; and a solder resist layer formed on a surface of the stack opposite to the substrate, wherein a diameter of the first hole is gradually decreased from the first surface toward the second surface, and a diameter of the second hole is gradually decreased from the second surface toward the first surface.