STRUCTURE AND METHOD OF MANUFACTURING A STACKED MEMORY ARRAY FOR JUNCTION-FREE CELL TRANSISTORS

摘要

A three-dimensional NAND memory device and an associated method for manufacturing this device are provided. The three-dimensional NAND memory device includes a source contact electrically isolated from a conductive gate material. The source contact also electrically connects a conductive source line to a first silicon strip and a second silicon strip through the conductive gate material.