METHOD FOR FORMING TiSiN THIN FILM LAYER BY USING ATOMIC LAYER DEPOSITION

摘要

There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9×10−3 Torr or less, Si containing gas: 1×10−3˜3×10−1 Torr and N containing gas: 7×10−3˜6×10−1 Torr, and a pressure range of the gas is 500 mTorr˜5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.

主权项

1. A method for forming a TiSiN thin film on a substrate according to ALD comprising:
a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate comprising first steps:
supplying Ti containing gas for a predetermined time,purging oversupplied Ti containing gas by supplying an inert gas for a predetermined time after that,supplying N containing gas for predetermined time after that,purging oversupplied residual products with an inert gas for predetermined time after that; a third process of forming a SiN film comprising second steps:
supplying Si containing gas on the thin film for a predetermined time,purging oversupplied Si containing gas by supplying an inert gas for a predetermined time after that,supplying N containing gas for a predetermined time after that,purging residual products with an inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas 9×10−3 or less, Si containing gas: 1×10−3˜3×10−1 and N containing gas: 7×10−3˜6×10−1 Torr, and a pressure range of the gas is 500 mTorr˜5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less, characterized in that in the second proves the first steps are repeated at least one time prior to the third process and that in the third process the second steps are repeated at least one time prior to the fourth process.