BIAS-INSENSITIVE TRIGGER CIRCUIT FOR BIGFET ESD SUPPLY PROTECTION

摘要

Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.

主权项

1. An electrostatic discharge (ESD) protection device for an integrated circuit (IC) device, the ESD protection device comprising:
a bigFET configured to conduct an ESD current during an ESD event; and a trigger device configured to trigger the bigFET during the ESD event, the trigger device comprising:
a slew rate detector configured to detect the ESD event;a driver stage configured to drive the bigFET; anda keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET.