| 发明名称 |
MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
A memory device and a manufacturing method of the same are provided. The memory device includes a substrate, a 3D memory array, a periphery circuit, and a conductive connection structure. The 3D memory array and the periphery circuit are stacked on the substrate. The periphery circuit includes a patterned metal layer and a contact structure electrically connected to the patterned metal layer. The conductive connection structure is electrically connected to the patterned metal layer. The 3D memory array is electrically connected to the periphery circuit via the conductive connection structure. |
| 申请公布号 |
US2015048506(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201313965269 |
申请日期 |
2013.08.13 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Hsiao Yi-Hsuan;Shih Yen-Hao;Chen Shih-Hung;Lue Hang-Ting |
| 分类号 |
H01L27/06;H01L27/105;H01L27/12 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a substrate; a 3D memory array and a periphery circuit stacked on the substrate, the periphery circuit comprising: a patterned metal layer; and a contact structure electrically connected to the patterned metal layer; and a conductive connection structure electrically connected to the patterned metal layer, wherein the 3D memory array is electrically connected to the periphery circuit via the conductive connection structure. |
| 地址 |
Hsinchu TW |
