| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which propagation loss is small and a refractive index may be efficiently changed, and a method for manufacturing the same. <P>SOLUTION: An optical semiconductor device comprises: a semiconductor optical waveguide layer 14 formed above a substrate 10 and including a first impurity region 16 of a first conductivity type, a second impurity region 18 of a second conductivity type opposite to the first conductivity type and a stripe-shaped optical waveguide 15 formed between the first impurity region and the second impurity region; a first semiconductor layer 26 of the first conductivity type for connecting the first impurity region to an upper portion of one sidewall of the optical waveguide; and a second semiconductor layer 28 of the second conductivity type for connecting the second impurity region 18 to an upper portion of the other sidewall of the optical waveguide. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
