| 摘要 |
<p>Provided is a method for forming an n-type contact electrode comprising an n-type nitride semiconductor such as Al x In y Ga z N (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0 < x ‰¤ 1.0, 0 ‰¤ y ‰¤ 0.1, and 0 ‰¤ z < 1.0). Said method includes: a step in which a first electrode metal layer comprising at least one metal selected from among titanium, vanadium, and tantalum is formed on a layer of the aforementioned n-type semiconductor and then heat-treated at a temperature between 800°C and 1200°C; and a step in which a second electrode metal layer is formed on top of the first electrode metal layer and then heat-treated at a temperature between 700°C and 1000°C. The second electrode metal layer contains a layer comprising a metal, such as aluminum, that has a work function between 4.0 and 4.8 eV and a resistivity between 1.5 × 10 -6 ©·cm and 4.0 × 10 -6 ©·cm.</p> |
