| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma etching method and a plasma etching device which can increase anisotropy of etching. <P>SOLUTION: In a plasma etching method for etching a substrate S, on which a resist mask is formed, in a vacuum chamber 11, a main etching step is performed by supplying a first amount of high-frequency power to a stage electrode 14, on which the substrate S is placed, while supplying a second amount of high-frequency power to high-frequency antennas 17 placed above the substrate S so as to change an etching gas inside the vacuum chamber 11 into a plasma state. In addition, before the main etching step, a pre-etching step is performed by supplying a third amount of high-frequency power which is larger than the first amount of high-frequency power to the stage electrode 14 so as to change the etching gas inside the vacuum chamber 11 into the plasma state. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
