| 发明名称 | On-chip electronic device and method for manufacturing the same | ||
| 摘要 | The present invention relates to an on-chip electronic device and a method for manufacturing the same. The on-chip electronic device according to the present invention comprises a substrate, a porous layer, a plurality of magnetic bodies, and an electronic member layer. The porous layer is disposed on the substrate and has a plurality of voids; each of the plurality of magnetic bodies is disposed in the plurality of voids, respectively; and the electronic member layer is disposed on one side of the porous layer, such as upper side of or lower sider of the porous layer. Because the plurality of magnetic bodies is used as the core of the inductance, the inductance is increased effectively and the area of the on-chip electronic device is reduced. Besides the manufacturing method according to the present invention is simple and compatible with the current CMOS process, the manufacturing cost can be lowered. | ||
| 申请公布号 | US8957498(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201213484865 | 申请日期 | 2012.05.31 |
| 申请人 | National Chiao Tung University | 发明人 | Cheng Yu-Ting;Chao Tzu-Yuan;Chen Kuan-Ming;Hsu Hsin-Fu |
| 分类号 | H01L27/08;H01L49/02;H01L23/522;H01L23/532 | 主分类号 | H01L27/08 |
| 代理机构 | Rosenberg, Klein & Lee | 代理人 | Rosenberg, Klein & Lee |
| 主权项 | 1. An on-chip electronic device, comprising: a substrate; a porous layer, disposed on said substrate, and having a plurality of nanometer voids; a plurality of magnetic bodies, disposed in said plurality of nanometer voids; and an electronic member layer, disposed on one side of said porous layer; wherein said electronic member layer is disposed on the lower sider of said porous layer, and further comprising a beam layer, disposed between said electronic member layer and said porous layer. | ||
| 地址 | Hsinchu TW | ||